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PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

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PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

Name: PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors
Brand: Nexperia USA Inc.
Price: 1 USD

Wholesale PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors from china suppliers

Brand Name : Nexperia USA Inc.

Model Number : PBHV8540X,115

Certification : ROHS

Place of Origin : CHINA

MOQ : 10

Price : Negotiated

Payment Terms : T/T, Western Union

Supply Ability : 500000pcs

Delivery Time : 2-15days

Packaging Details : Standard package

Family : Discrete Semiconductor Products

Category : Electronic Components-Transistors

Base part number : PBHV8540

Details : Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 520 mW

Type : Transistors - FETs, MOSFETs - Single

Description : TRANS NPN 400V 0.5A SOT89

Package : SOT-89

Mounting Type : Surface Mount

Stock : In Stock

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PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor

Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor

Description:

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.

Application:

• LED driver for LED chain module

• LCD backlighting

• Automotive motor management

• Hook switch for wired telecom

• Switch Mode Power Supply (SMPS)

Features :

• High voltage

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• AEC-Q101 qualified

Name Description Version

PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads

Product Technical Specifications

Category	Discrete Semiconductor Products
	Transistors - Bipolar (BJT) - Single
Mfr	Nexperia USA Inc.
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 60mA, 300mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 10V
Power - Max	520 mW
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89
Base Product Number	PBHV8540

Part number	PBHV8540X,115
EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95

Images:

PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

Product Tags:

PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors Images

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